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Le Thi Ngoc Bao♦, Nguyen T., Do Muoi♦, H.N.T. Phung♦, Le Van Tan♦, Negative electronic compressibility in MoS2 monolayers,
PHYSICA B-CONDENSED MATTER, ISSN: 0921-4526, DOI: 10.1016/j.physb.2025.418022, Vol.720, pp.418022-1-10, 2026 Abstract:
The Coulomb-driven renormalization of electronic compressibility in monolayer MoS2 remains poorly understood at finite temperatures. Using the Rytova–Keldysh potential with a nonlocal dielectric response, we calculate the compressibility as a function of carrier density and temperature in experimentally relevant regimes. The exchange and correlation energies are treated, respectively, within the noninteracting (NI), Hartree–Fock (HF), and random phase approximation (RPA) frameworks. We demonstrate that the RPA, through enhanced screening induced by many-body correlations, yields negative values of the electronic compressibility,
in agreement with recent measurements resolved in temperature and density. At high temperatures ( Keywords:
Graphene, Quantum well, TMDCs, Compressibility TMDCs, Capacity quantum Affiliations:
| Le Thi Ngoc Bao | - | other affiliation | | Nguyen T. | - | IPPT PAN | | Do Muoi | - | other affiliation | | H.N.T. Phung | - | other affiliation | | Le Van Tan | - | other affiliation |
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