Institute of Fundamental Technological Research
Polish Academy of Sciences


E. Grzanka

Recent publications
1.  Moneta J., Staszczak G., Grzanka E., Tauzowski P., Dłużewski P., Smalc-Koziorowska J., Formation of a-type dislocations near the InGaN/GaN interface during post-growth processing of epitaxial structures, JOURNAL OF APPLIED PHYSICS, ISSN: 0021-8979, DOI: 10.1063/5.0128514, Vol.133, pp.045304-1-045304-12, 2023

Cross-sectional transmission electron microscopy studies often reveal a-type dislocations located either below or above the interfaces in
InGaN/GaN structures deposited along the [0001] direction. We show that these dislocations do not emerge during growth but rather are a
consequence of the stress state on lateral surfaces and mechanical processing, making them a post-growth effect. In cathodoluminescence mapping, these defects are visible in the vicinity of the edges of InGaN/GaN structures exposed by cleaving or polishing. Finite element cal-culations show the residual stress distribution in the vicinity of the InGaN/GaN interface at the free edge. The stress distribution is discussed in terms of dislocation formation and propagation. The presence of such defects at free edges of processed devices based on InGaN layers may have a significant negative impact on the device performance.

Luminescence ,Transmission electron microscopy ,Focused ion beam ,Semiconductor materials ,Epitaxy ,Crystal structure ,Crystal lattices ,Crystallographic defects,Mechanical stress,X-ray diffraction

Moneta J. - other affiliation
Staszczak G. - other affiliation
Grzanka E. - other affiliation
Tauzowski P. - IPPT PAN
Dłużewski P. - IPPT PAN
Smalc-Koziorowska J. - other affiliation

Category A Plus


logo ippt            Pawińskiego 5B, 02-106 Warsaw
  +48 22 826 12 81 (central)
  +48 22 826 98 15

Find Us

© Institute of Fundamental Technological Research Polish Academy of Sciences 2024