Institute of Fundamental Technological Research
Polish Academy of Sciences


R. Czernecki

Recent publications
1.  Kret S., Dłużewski P., Szczepańska A., Żak M., Czernecki R., Kryśko M., Leszczyński M., Maciejewski G., Homogenous indium distribution in InGaN/GaN laser active structure grown by LP-MOCVD on bulk GaN crystal revealed by transmission electron microscopy and X-ray diffraction, NANOTECHNOLOGY, ISSN: 0957-4484, DOI: 10.1088/0957-4484/18/46/465707, Vol.18, No.46, pp.465707-0, 2007

We present transmission electron microscopy (TEM) and x-ray quantitative studies of the indium distribution in InxGa1−xN/GaN multiple quantum wells (MQWs) with x = 0.1 and 0.18. The quantum wells were grown by low-pressure metalorganic chemical vapour deposition (LP-MOCVD) on a bulk, dislocation-free, mono-crystalline GaN substrate. By using the quantitative TEM methodology the absolute indium concentration was determined from the 0002 lattice fringe images by the strain measurement coupled with finite element (FE) simulations of surface relaxation of the TEM sample. In the x-ray diffraction (XRD) investigation, a new simulation program was applied to monitor the indium content and lateral composition gradients. We found a very high quality of the multiple quantum wells with lateral indium fluctuations no higher than ΔxL = 0.025. The individual wells have very similar indium concentration and widths over the whole multiple quantum well (MQW) stack. We also show that the formation of 'false clusters' is not a limiting factor in indium distribution measurements. We interpreted the 'false clusters' as small In-rich islands formed on a sample surface during electron-beam exposure.

Kret S. - Institute of Physics, Polish Academy of Sciences (PL)
Dłużewski P. - IPPT PAN
Szczepańska A. - other affiliation
Żak M. - other affiliation
Czernecki R. - other affiliation
Kryśko M. - other affiliation
Leszczyński M. - other affiliation
Maciejewski G. - IPPT PAN

Conference abstracts
1.  Kret S., Bilska M., Ivaldi F., Leszczyński M., Czernecki R., Dłużewski P., Jurczak G., Young T.D., Determination of the nanoscale structural properties of the InAlN based devices by advanced TEM methods, E-MRS 2012 FALL MEETING, 2012-09-17/09-21, Warszawa (PL), pp.1, 2012

III-V semiconductors, piezoelectricity, high resolution transmission electron microscopy, band edge structure

Kret S. - Institute of Physics, Polish Academy of Sciences (PL)
Bilska M. - other affiliation
Ivaldi F. - other affiliation
Leszczyński M. - other affiliation
Czernecki R. - other affiliation
Dłużewski P. - IPPT PAN
Jurczak G. - IPPT PAN
Young T.D. - IPPT PAN

Category A Plus


logo ippt            Pawińskiego 5B, 02-106 Warsaw
  +48 22 826 12 81 (central)
  +48 22 826 98 15

Find Us

© Institute of Fundamental Technological Research Polish Academy of Sciences 2024