Institute of Fundamental Technological Research
Polish Academy of Sciences

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J. Thibault

Université Paul Cézanne (FR)

Conference papers
1.  Alexandre L., Jurczak G., Alfonso C., Saikly W., Grosjean C., Charai A., Thibault J., Microscopy of semiconducting materials CBED and FE study of thin foil relaxation in cross-section samples of Si/SiGe and Si/SiGe/Si heterostructures, Proceedings in Physics, ISSN: 0930-8989, DOI: 10.1007/978-1-4020-8615-1_90, Vol.120, pp.415-418, 2008

Keywords:
Convergent-beam electron diffraction, elastic strain relaxation, finite element modelling

Affiliations:
Alexandre L. - CNRS (FR)
Jurczak G. - IPPT PAN
Alfonso C. - CNRS (FR)
Saikly W. - Université Paul Cézanne (FR)
Grosjean C. - ST Microelectronics (RCCAL) (FR)
Charai A. - CNRS (FR)
Thibault J. - Université Paul Cézanne (FR)

Category A Plus

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