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S. Krukowski

Institute of High Pressure Physics, Polish Academy of Sciences (PL)

Recent publications
1.  Łażewski J., Jochym P.T., Piekarz P., Sternik M., Parlinski K., Cholewiński J., Dłużewski P., Krukowski S., DFT modelling of the edge dislocation in 4H-SiC, JOURNAL OF MATERIALS SCIENCE, ISSN: 0022-2461, DOI: 10.1007/s10853-019-03630-5, Vol.54, No.15, pp.10737-10745, 2019

Abstract:
We have presented ab initio study, based on density functional theory methods, of full-core edge dislocation impact on basic properties of 4H-SiC semiconductor. To enable calculations in periodic boundary conditions, we have proposed geometry with two dislocations with opposite Burgers vectors. For this geometry, which determines the distance between dislocations, we have estimated the creation energy per unit length of a single-edge dislocation. The radial distribution function has been used to assess the effect of the dislocations on the local crystal structure. The analysis of the electronic structure reveals mid-gap p states induced by broken atomic bonds in the dislocation core. The maps of charge distribution and electrostatic potential have been calculated, and the significant decrease in the electrostatic barriers in the vicinity of the dislocation cores has been quantified. The obtained results have been discussed in the light of previous findings and calculations based mainly on phenomenological models.

Affiliations:
Łażewski J. - Institute of Nuclear Physics, Polish Academy of Sciences (PL)
Jochym P.T. - Institute of Nuclear Physics, Polish Academy of Sciences (PL)
Piekarz P. - Institute of Nuclear Physics, Polish Academy of Sciences (PL)
Sternik M. - Institute of Nuclear Physics, Polish Academy of Sciences (PL)
Parlinski K. - Institute of Nuclear Physics, Polish Academy of Sciences (PL)
Cholewiński J. - other affiliation
Dłużewski P. - IPPT PAN
Krukowski S. - Institute of High Pressure Physics, Polish Academy of Sciences (PL)

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