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Yevgen Syryanyy

Institute of Physics, Polish Academy of Sciences (PL)


Recent publications
1.  Demchenko I.N., Melikhov Y., Walczak M.S., Ratajczak R., Sobczak K., Barcz A., Minikaev R., Dynowska E., Domagała J.Z., Chernyshova M., Syryanyy Y., Gavrilov N.V., Sawicki M., Effect of rapid thermal annealing on damage of silicon matrix implanted by low-energy rhenium ions, JOURNAL OF ALLOYS AND COMPOUNDS, ISSN: 0925-8388, DOI: 10.1016/j.jallcom.2020.156433, Vol.846, pp.156433-1-10, 2020

Abstract:
The structural, electronic, and magnetic properties of low-energy rhenium implanted c-Si are examined for the first time. The damage created by rhenium ions and the following partial reconstruction of the silicon host matrix after rapid thermal annealing (RTA) are investigated as a function of the fluence. Rutherford backscattering spectrometry (RBS) results reveal that the implanted ions are located in the near-surface region with the distribution maximum at about 23 nm below the surface. The analysis of rhenium-depth distribution using the McChasy code shows that the implanted Re-ions are located in the interstitial lattice positions. The RTA leads to a partial recovery of the silicon crystal structure. According to the RBS results, the formed inclusions are not coherent with the silicon host matrix causing an increase of the lattice distortion. Analysis of channeled RBS/c spectra carried out by the McChasy code revealed different levels of bent channels in damaged regions suggesting bimodal distribution of inclusions in the silicon. Studies of high-resolution X-ray photoelectron spectroscopy (XPS) conducted after the RTA showed the shift of Re 4f7/2 binding energy (BE) by +0.68 and + 0.85 eV with respect to metallic rhenium for the samples with lower/higher fluencies, respectively. Complex XPS, density functional theory (DFT) simulations, and transmission electron microscopy (TEM) data analysis allowed us to conclude that the near-surface layer of the sample (~10 nm) consists of nanoinclusions with cubic and/or hexagonal ReSi. In the middle area of the samples, much larger nanoinclusions (>10/20 nm for higher/lower fluencies, respectively) containing pure metallic rhenium inside are formed. The RTA increases the magnetic moment of the sample with the lower dose nearly 20-fold, whereas in the sample with the higher dose a 3-fold increment is observed only. The magnetic response of the examined systems after the RTA indicates a presence of magnetic interactions between the nanoinclusions resulting in the system exhibiting super-spin glass or super-ferromagnetism.

Keywords:
rhenium-implanted silicon, RBS, XPS, RTA, TEM, DFT

Affiliations:
Demchenko I.N. - Institute of Physics, Polish Academy of Sciences (PL)
Melikhov Y. - IPPT PAN
Walczak M.S. - other affiliation
Ratajczak R. - National Centre for Nuclear Research (PL)
Sobczak K. - other affiliation
Barcz A. - Institute of Physics, Polish Academy of Sciences (PL)
Minikaev R. - other affiliation
Dynowska E. - other affiliation
Domagała J.Z. - Institute of Physics, Polish Academy of Sciences (PL)
Chernyshova M. - Institute of Plasma Physics and Laser Microfusion (PL)
Syryanyy Y. - Institute of Physics, Polish Academy of Sciences (PL)
Gavrilov N.V. - other affiliation
Sawicki M. - other affiliation
2.  Demchenko I.N., Syryanyy Y., Melikhov Y., Nittler L., Gladczuk L., Lasek K., Cozzarini L., Dalmiglio M., Goldoni A., Konstantynov P., Chernyshova M., X-ray photoelectron spectroscopy analysis as a tool to assess factors influencing magnetic anisotropy type in Co/MgO system with gold interlayer, SCRIPTA MATERIALIA, ISSN: 1359-6462, DOI: 10.1016/j.scriptamat.2017.10.006, Vol.145, pp.50-53, 2018

Abstract:
X-ray photoelectron spectroscopy (XPS) studies of Au/Co/Au(0.3 nm)/MgO and Au/Co/MgO systems were conducted in order to monitor the electronic structure modification at Co/MgO interface with/without gold interlayer. A detailed analysis of Co 2p states revealed that the amount of minor oxygen contribution at Co/MgO interface decreased after the Au interlayer was added. The obtained XPS results together with density functional theory (DFT) allowed explanation of the increase of surface anisotropy energy in the sample with the gold interlayer in terms of (i) noble and transitional metal d-d orbital hybridization; (ii) interfacial Co 3d and O 2p; and (iii) interface imperfection.

Affiliations:
Demchenko I.N. - Institute of Physics, Polish Academy of Sciences (PL)
Syryanyy Y. - Institute of Physics, Polish Academy of Sciences (PL)
Melikhov Y. - other affiliation
Nittler L. - Institute of Physics, Polish Academy of Sciences (PL)
Gladczuk L. - Institute of Physics, Polish Academy of Sciences (PL)
Lasek K. - Institute of Physics, Polish Academy of Sciences (PL)
Cozzarini L. - Elettra-Sincrotrone Trieste S.C.p.A. (IT)
Dalmiglio M. - Elettra-Sincrotrone Trieste S.C.p.A. (IT)
Goldoni A. - Elettra-Sincrotrone Trieste S.C.p.A. (IT)
Konstantynov P. - Institute of Physics, Polish Academy of Sciences (PL)
Chernyshova M. - Institute of Plasma Physics and Laser Microfusion (PL)
3.  Demchenko I.N., Melikhov Y., Syryanyy Y., Zaytseva I., Konstantynov P., Chernyshov M., Effect of argon sputtering on XPS depth-profiling results of Si/Nb/Si, JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, ISSN: 0368-2048, DOI: 10.1016/j.elspec.2017.09.009, Vol.224, pp.17-22, 2018

Abstract:
Ultrathin Si/Nb/Si trilayer is an excellent example of a system for which dimensionality effects, together with other factors like type of a substrate material and growth method, influence strongly its superconducting properties. This study offers some important insights into experimental investigation of density of states of such a system with the aim to identify an electronic structure of the interface as a function of niobium layer thickness. For that, two Si/Nb/Si trilayers with 9.5 and 1.3 nm thick niobium layer buried in amorphous silicon were studied using high-resolution (HR) XPS depth-profile techniques. Strong influence of sputtering was observed, which resulted in severe intermixture of Si and Nb atoms. Nevertheless, a sharp top interface and metallic phase of niobium were detected for the thicker layer sample. On the contrary, a Nb-rich mixed alloy at top interface was observed for the thinner layer sample.

Keywords:
High-resolution X-ray photoelectron spectroscopy, XPS, Si/Nb/Si, NbSi, Depth profiling

Affiliations:
Demchenko I.N. - Institute of Physics, Polish Academy of Sciences (PL)
Melikhov Y. - other affiliation
Syryanyy Y. - Institute of Physics, Polish Academy of Sciences (PL)
Zaytseva I. - Institute of Physics, Polish Academy of Sciences (PL)
Konstantynov P. - Institute of Physics, Polish Academy of Sciences (PL)
Chernyshov M. - Institute of Plasma Physics and Laser Microfusion (PL)

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