Instytut Podstawowych Problemów Techniki
Polskiej Akademii Nauk

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Roman Minikayev


Ostatnie publikacje
1.  Demchenko I., Syryanyy Y., Shokri A., Melikhov Y., Domagała J. Z., Minikayev R., Derkachova A., Munnik F., Kentsch U., Zając M., Reck A., Haufe N., Galazka Z., Local structure modification around Si atoms in Si-implanted monocrystalline β-Ga2O3 (100) under heated substrate conditions, ACTA MATERIALIA, ISSN: 1359-6454, DOI: 10.1016/j.actamat.2025.121036, Vol.292, pp.121036-1-11, 2025

Streszczenie:
Doping of β-Ga2O3 (100) with Si by ion implantation onto heated substrates is investigated. The study reveals complex ion beam-induced defect processes in β-Ga2O3, characterized by the formation of various defect types and their temperature-dependent transformation. By employing X-Ray Diffraction, Rutherford Backscattering Spectrometry, Particle-Induced X-Ray Emission, X-ray Absorption Near Edge Structure Spectroscopy, Transmission Electron Microscopy, and Density Functional Theory analyses, we examine lattice deformation, identify the local environment of dopants, assess electronic structure modifications, and verify the presence of extended defects induced by ion implantation. Our findings highlight the predominant contribution of substitutional and interstitial Si ions incorporated into complexes that act as donors manifesting n-type conductivity, while some fraction of the defects form complexes that act as traps for charge carriers. Notably, no monoclinic phase transformations were observed during implantation despite substrate temperature variations from 300 to 800 °C.

Słowa kluczowe:
β-Ga2O3, WBG, Implantation, XRD, RBS/PIXE/c, XANES, TEM, DFT, FMS

Afiliacje autorów:
Demchenko I. - inna afiliacja
Syryanyy Y. - Institute of Physics, Polish Academy of Sciences (PL)
Shokri A. - inna afiliacja
Melikhov Y. - IPPT PAN
Domagała J. Z. - Institute of Physics, Polish Academy of Sciences (PL)
Minikayev R. - inna afiliacja
Derkachova A. - inna afiliacja
Munnik F. - inna afiliacja
Kentsch U. - inna afiliacja
Zając M. - Warsaw University of Life Sciences (PL)
Reck A. - inna afiliacja
Haufe N. - inna afiliacja
Galazka Z. - inna afiliacja
200p.
2.  Wilczewski S., Nowak Z. M., Maj M., Osial M., Minikayev R., Giersig M., Enhancing Epoxy Composites with Graphene and Graphene Oxide: Thermal and Mechanical Insights, ChemNanoMat, ISSN: 2199-692X, DOI: 10.1002/cnma.202400488, pp.1-15, 2024

Streszczenie:
This paper shows the graphene and graphene oxide nanoflakes as the 0.1, 0.5, 1, 2, and 4 wt.% reinforcement of epoxy-resin matrix to enhance the thermal and mechanical characteristics of the composite. Experimental measurement of the glass transition temperature and thermal expansion coefficient indicated that the addition of nanostructural filler improving the glass transition temperature about ~12 oC for nanocomposite filled carbon-based nanoparticles for both heating and cooling cycles compared to the bare epoxy resin. Young's modulus measured by nanoindentation and the stress versus strain curves for different weight fractions of graphene nanoflakes additives during uniaxial compression and tension considered were obtained from the experiments. The distributions of strain field for the transverse, axial and shear components on the nanocomposites, during the uniaxial tension process for quasi-static strain rates, were analyzed. The tensile strengths show improvement for nanocomposites with less than 1 % weight fraction of carbon-based nanoparticles. The compressive yield stress increased to a maximal value (at the recorded peak on the curve) for an epoxy nanocomposite having 2 wt.% oxidized graphene flakes, where both parameters were enhanced with the oxidized form of graphene for the more effective dispersion in the epoxy resin matrix over the bare graphene filler.

Słowa kluczowe:
epoxy resin, nanocomposite, carbon nanoparticles, tensile strength, compression strength, thermal stability

Afiliacje autorów:
Wilczewski S. - inna afiliacja
Nowak Z. M. - IPPT PAN
Maj M. - IPPT PAN
Osial M. - IPPT PAN
Minikayev R. - inna afiliacja
Giersig M. - IPPT PAN
100p.

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