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Teisseyre H.♦, Suski T.♦, Łepkowski S.P.♦, Perlin P.♦, Jurczak G., Dłużewski P., Daudin B.♦, Grandjean N.♦, Strong electric field and nonuniformity effects in GaN/AlN quantum dots revealed by high pressure studies,
APPLIED PHYSICS LETTERS, ISSN: 0003-6951, DOI: 10.1063/1.2219381, Vol.89, No.5, pp.51902-1-3, 2006 Streszczenie:
The photoluminescence (PL) from GaN quantum dots (QDs) embedded in AlN has been investigated under hydrostatic pressure. The measured pressure coefficient of emitted light energy [dE / dP] shows a negative value, in contrast with the positive pressure coefficient of the GaN band gap. We also observed that increasing pressure leads to a significant decrease of the light emission intensity and an asymmetric broadening of the PL band. All these effects are related to the pressure-induced increase of the built-in electric field. A comparison is made between experimental results and the proposed theoretical model which describes the pressure behavior of nitride QDs. Słowa kluczowe:
III-V semiconductor, Quantum dot, Piezoelectricity, Photoluminescence Afiliacje autorów:
| Teisseyre H. | - | Institute of Physics, Polish Academy of Sciences (PL) | | Suski T. | - | Institute of High Pressure Physics, Polish Academy of Sciences (PL) | | Łepkowski S.P. | - | Institute of High Pressure Physics, Polish Academy of Sciences (PL) | | Perlin P. | - | Institute of High Pressure Physics, Polish Academy of Sciences (PL) | | Jurczak G. | - | IPPT PAN | | Dłużewski P. | - | IPPT PAN | | Daudin B. | - | CNRS (FR) | | Grandjean N. | - | École Polytechnique Federale de Lausanne (CH) |
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