Instytut Podstawowych Problemów Techniki
Polskiej Akademii Nauk


Claude Alfonso


Ostatnie publikacje
1.  Alfonso C., Alexandre L., Leroux Ch., Jurczak G., Saikaly W., Charai A., Thibault-Penisson J., HOLZ lines splitting on SiGe/Si relaxed samples: Analytical solutions for the kinematical equation, ULTRAMICROSCOPY, ISSN: 0304-3991, Vol.110, No.4, pp.285-296, 2010

Sample thinning for TEM observation introduces large changes with respect to the initial strain state of the bulk sample and particularly relaxation via the free surfaces which leads to HOLZ lines splitting in the CBED pattern. This phenomenon has been simulated owing to extensive calculations either in the kinematical or the dynamical framework of electron diffraction mainly using displacement fields resulting from finite element modelling of the sample relaxation. HOLZ line splitting is well reproduced and numerical fits can be used to compare experimental and calculated curves. This paper proposes new analytical solutions for the kinematical equation of electron diffraction. Simple mathematical functions are used to approximate the deformation profiles. We showed that, under certain conditions, the rocking curve profile can be analytically calculated, thus providing some clue to separate different contributions to the rocking curves against deformation profile. These simplified analytical expressions are used to extract the maximum amplitude displacement within the sample with about 10% accuracy. This accuracy can even be improved to 1% with a short adjustement routine. The influence of the shape of the displacement profile on the rocking curves is demonstrated.

Słowa kluczowe:
Convergent beam electron diffraction, Kinematical theory of electron diffraction, Analytical expressions, Strain measurement

Afiliacje autorów:
Alfonso C. - CNRS (FR)
Alexandre L. - CNRS (FR)
Leroux Ch. - CNRS (FR)
Jurczak G. - IPPT PAN
Saikaly W. - CNRS (FR)
Charai A. - CNRS (FR)
Thibault-Penisson J. - CNRS (FR)

Prace konferencyjne
1.  Alexandre L., Jurczak G., Alfonso C., Saikly W., Grosjean C., Charai A., Thibault J., Microscopy of semiconducting materials CBED and FE study of thin foil relaxation in cross-section samples of Si/SiGe and Si/SiGe/Si heterostructures, Proceedings in Physics, ISSN: 0930-8989, DOI: 10.1007/978-1-4020-8615-1_90, Vol.120, pp.415-418, 2008

Słowa kluczowe:
Convergent-beam electron diffraction, elastic strain relaxation, finite element modelling

Afiliacje autorów:
Alexandre L. - CNRS (FR)
Jurczak G. - IPPT PAN
Alfonso C. - CNRS (FR)
Saikly W. - Université Paul Cézanne (FR)
Grosjean C. - ST Microelectronics (RCCAL) (FR)
Charai A. - CNRS (FR)
Thibault J. - Université Paul Cézanne (FR)

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