Instytut Podstawowych Problemów Techniki
Polskiej Akademii Nauk

Partnerzy

Jinwei Gao


Ostatnie publikacje
1.  Li C., Qiu T., Li C., Cheng B., Jin M., Zhou G., Giersig M., Wang X., Gao J., Akinoglu E.M., Highly Flexible and Acid−Alkali Resistant TiN Nanomesh Transparent Electrodes for Next-Generation Optoelectronic Devices, ACS Nano, ISSN: 1936-0851, DOI: 10.1021/acsnano.3c05211, pp.1-10, 2023

Streszczenie:
Transparent electrodes are vital for optoelectronic devices, but their development has been constrained by the limitations of existing materials such as indium tin oxide (ITO) and newer alternatives. All face issues of robustness, flexibility,conductivity, and stability in harsh environments. Addressing this challenge, we developed a flexible, low-cost titanium nitride (TiN) nanomesh transparent electrode showcasing exceptional acid−alkali resistance. The TiN nanomesh electrode, created by depositing a TiN coating on a naturally cracked gel film substrate via a sputtering method, maintains a stable electrical performance through thousands of bending cycles. It exhibits outstanding chemical stability, resisting strong acid and alkali corrosion, which is a key hurdle for current electrodes when in contact with acidic/alkaline materials and solvents during device fabrication. This, coupled with superior light transmission and conductivity (88% at 550 nm with a sheet resistance of ∼200 Ω/sq), challenges the reliance on conventional materials. Our TiN nanomesh electrode,successfully applied in electric heaters and electrically controlled thermochromic devices, offers broad potential beyond harsh environment applications. It enables alternative possibilities for the design and fabrication of future optoelectronics for advancements in this pivotal field.

Słowa kluczowe:
transparent electrode, titanium nitride, flexible, corrosion resistant, mesh, smart window

Afiliacje autorów:
Li C. - inna afiliacja
Qiu T. - inna afiliacja
Li C. - inna afiliacja
Cheng B. - inna afiliacja
Jin M. - South China Normal University (CN)
Zhou G. - South China Normal University (CN)
Giersig M. - IPPT PAN
Wang X. - inna afiliacja
Gao J. - inna afiliacja
Akinoglu E.M. - University of Melbourne (AU)
200p.

Kategoria A Plus

IPPT PAN

logo ippt            ul. Pawińskiego 5B, 02-106 Warszawa
  +48 22 826 12 81 (centrala)
  +48 22 826 98 15
 

Znajdź nas

mapka
© Instytut Podstawowych Problemów Techniki Polskiej Akademii Nauk 2024