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T. Suski

Institute of High Pressure Physics, Polish Academy of Sciences (PL)

Ostatnie publikacje
1.  Teisseyre H., Suski T., Łepkowski S.P., Perlin P., Jurczak G., Dłużewski P., Daudin B., Grandjean N., Strong electric field and nonuniformity effects in GaN/AlN quantum dots revealed by high pressure studies, APPLIED PHYSICS LETTERS, ISSN: 0003-6951, DOI: 10.1063/1.2219381, Vol.89, No.5, pp.51902-1-3, 2006

Streszczenie:
The photoluminescence (PL) from GaN quantum dots (QDs) embedded in AlN has been investigated under hydrostatic pressure. The measured pressure coefficient of emitted light energy [dE / dP] shows a negative value, in contrast with the positive pressure coefficient of the GaN band gap. We also observed that increasing pressure leads to a significant decrease of the light emission intensity and an asymmetric broadening of the PL band. All these effects are related to the pressure-induced increase of the built-in electric field. A comparison is made between experimental results and the proposed theoretical model which describes the pressure behavior of nitride QDs.

Słowa kluczowe:
III-V semiconductor, Quantum dot, Piezoelectricity, Photoluminescence

Afiliacje autorów:
Teisseyre H. - Institute of Physics, Polish Academy of Sciences (PL)
Suski T. - Institute of High Pressure Physics, Polish Academy of Sciences (PL)
Łepkowski S.P. - Institute of High Pressure Physics, Polish Academy of Sciences (PL)
Perlin P. - Institute of High Pressure Physics, Polish Academy of Sciences (PL)
Jurczak G. - IPPT PAN
Dłużewski P. - IPPT PAN
Daudin B. - CNRS (FR)
Grandjean N. - École Polytechnique Federale de Lausanne (CH)

Prace konferencyjne
1.  Jurczak G., Łepkowski S.P., Dłużewski P., Suski T., Modeling of elastic, piezoelectric and optical properties of vertically correlated GaN/AlN quantum dots, E-MRS 2004, Symposium on Science and Technology of Nitrides and Related Materials/Wide Band Gap II-VI Semiconductors, E-MRS 2004 FALL MEETING SYMPOSIA C AND F, 2004-08-06/08-10, Warszawa (PL), DOI: 10.1002/pssc.200460604, Vol.2, No.3, pp.972-975, 2005

Streszczenie:
We theoretically investigate elastic, piezoelectric and optical properties of wurtzite GaN/AlN quantum dots, having hexagonal pyramid-shape, stacked in a multilayer. We show that the strain existing in quantum dots and barriers depends significantly on the distance between the dots i.e. on the width of AlN barriers. Drop of the electrostatic potential in the quantum dot region slightly increases with increasing of the barrier width. This increase is however much smaller for QDs than for superlattice of quantum wells. Consequently, band-to-band transition energies in the vertically correlated quantum dots show rather weak dependence on the width of AlN barriers.

Słowa kluczowe:
III-V semiconductor, quantum dot, piezoelectricity, elastic strain, electrostatic potential

Afiliacje autorów:
Jurczak G. - IPPT PAN
Łepkowski S.P. - Institute of High Pressure Physics, Polish Academy of Sciences (PL)
Dłużewski P. - IPPT PAN
Suski T. - Institute of High Pressure Physics, Polish Academy of Sciences (PL)

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