Instytut Podstawowych Problemów Techniki
Polskiej Akademii Nauk


R. Czernecki

Ostatnie publikacje
1.  Kret S., Dłużewski P., Szczepańska A., Żak M., Czernecki R., Kryśko M., Leszczyński M., Maciejewski G., Homogenous indium distribution in InGaN/GaN laser active structure grown by LP-MOCVD on bulk GaN crystal revealed by transmission electron microscopy and X-ray diffraction, NANOTECHNOLOGY, ISSN: 0957-4484, DOI: 10.1088/0957-4484/18/46/465707, Vol.18, No.46, pp.465707-0, 2007

We present transmission electron microscopy (TEM) and x-ray quantitative studies of the indium distribution in InxGa1−xN/GaN multiple quantum wells (MQWs) with x = 0.1 and 0.18. The quantum wells were grown by low-pressure metalorganic chemical vapour deposition (LP-MOCVD) on a bulk, dislocation-free, mono-crystalline GaN substrate. By using the quantitative TEM methodology the absolute indium concentration was determined from the 0002 lattice fringe images by the strain measurement coupled with finite element (FE) simulations of surface relaxation of the TEM sample. In the x-ray diffraction (XRD) investigation, a new simulation program was applied to monitor the indium content and lateral composition gradients. We found a very high quality of the multiple quantum wells with lateral indium fluctuations no higher than ΔxL = 0.025. The individual wells have very similar indium concentration and widths over the whole multiple quantum well (MQW) stack. We also show that the formation of 'false clusters' is not a limiting factor in indium distribution measurements. We interpreted the 'false clusters' as small In-rich islands formed on a sample surface during electron-beam exposure.

Afiliacje autorów:
Kret S. - Institute of Physics, Polish Academy of Sciences (PL)
Dłużewski P. - IPPT PAN
Szczepańska A. - inna afiliacja
Żak M. - inna afiliacja
Czernecki R. - inna afiliacja
Kryśko M. - inna afiliacja
Leszczyński M. - inna afiliacja
Maciejewski G. - IPPT PAN

Abstrakty konferencyjne
1.  Kret S., Bilska M., Ivaldi F., Leszczyński M., Czernecki R., Dłużewski P., Jurczak G., Young T.D., Determination of the nanoscale structural properties of the InAlN based devices by advanced TEM methods, E-MRS 2012 FALL MEETING, 2012-09-17/09-21, Warszawa (PL), pp.1, 2012

Słowa kluczowe:
III-V semiconductors, piezoelectricity, high resolution transmission electron microscopy, band edge structure

Afiliacje autorów:
Kret S. - Institute of Physics, Polish Academy of Sciences (PL)
Bilska M. - inna afiliacja
Ivaldi F. - inna afiliacja
Leszczyński M. - inna afiliacja
Czernecki R. - inna afiliacja
Dłużewski P. - IPPT PAN
Jurczak G. - IPPT PAN
Young T.D. - IPPT PAN

Kategoria A Plus


logo ippt            ul. Pawińskiego 5B, 02-106 Warszawa
  +48 22 826 12 81 (centrala)
  +48 22 826 98 15

Znajdź nas

© Instytut Podstawowych Problemów Techniki Polskiej Akademii Nauk 2024