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Streszczenie:
Doping of β-Ga2O3 (100) with Si by ion implantation onto heated substrates is investigated. The study reveals complex ion beam-induced defect processes in β-Ga2O3, characterized by the formation of various defect types and their temperature-dependent transformation. By employing X-Ray Diffraction, Rutherford Backscattering Spectrometry, Particle-Induced X-Ray Emission, X-ray Absorption Near Edge Structure Spectroscopy, Transmission Electron Microscopy, and Density Functional Theory analyses, we examine lattice deformation, identify the local environment of dopants, assess electronic structure modifications, and verify the presence of extended defects induced by ion implantation. Our findings highlight the predominant contribution of substitutional and interstitial Si ions incorporated into complexes that act as donors manifesting n-type conductivity, while some fraction of the defects form complexes that act as traps for charge carriers. Notably, no monoclinic phase transformations were observed during implantation despite substrate temperature variations from 300 to 800 °C.

Słowa kluczowe:
β-Ga2O3, WBG, Implantation, XRD, RBS/PIXE/c, XANES, TEM, DFT, FMS