Instytut Podstawowych Problemów Techniki
Polskiej Akademii Nauk


Han Lu

South China Normal University (CN)

Ostatnie publikacje
1.  Bozheyev F., Akinoglu E.M., Wu L., Lu H., Nemkayeva R., Xue Y., Jin M., Giersig M., Band gap optimization of tin tungstate thin filmsfor solar water oxidation, International Journal of Hydrogen Energy, ISSN: 0360-3199, DOI: 10.1016/j.ijhydene.2020.01.126, Vol.45, No.15, pp.8676-8685, 2020

Semiconducting ternary metal oxide thin films exhibit a promising application for solarenergy conversion. However, the efficiency of the conversion is still limited by a band gapof a emiconductor, which determines an obtainable internal photovoltage for solar watersplitting. In this report the tunability of the tin tungstate band gap by O2 partial pressurecontrol in the magnetron co-sputtering process is shown. A deficiency in the Sn concentration increases the optical band gap of tin ungstate thin films. The optimum band gap of 1.7 eV for tin tungstate films is achieved for a Sn to W ratio at unity, which establishes thehighest photoelectrochemical activity. In particular, a maximum photocurrent density of 0.375 mA cm^2 at 1.23 VRHE and the lowest reported onset potential of -0.24 VRHE for SnWO4 thin films without any co-catalyst are achieved. Finally, we demonstrate that a Ni protection layer on the SnWO4 thin film enhances the photoelectrochemical stability, which isof paramount importance for application.

Słowa kluczowe:
thin film, tin tungstate, reactive magnetron sputtering, photocurrent density, thickness band gap

Afiliacje autorów:
Bozheyev F. - inna afiliacja
Akinoglu E.M. - University of Melbourne (AU)
Wu L. - inna afiliacja
Lu H. - South China Normal University (CN)
Nemkayeva R. - inna afiliacja
Xue Y. - South China Normal University (CN)
Jin M. - South China Normal University (CN)
Giersig M. - inna afiliacja

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