Instytut Podstawowych Problemów Techniki
Polskiej Akademii Nauk


dr inż. Piotr Chudziński

Zakład Teorii Ośrodków Ciągłych i Nanostruktur (ZTOCiN)
Zespół Badawczy Nanomateriałów do Zastosowań w Elektronice i Biomedycynie (ZeBNZEiB)
stanowisko: specjalista badawczo-techniczny
telefon: (+48) 22 826 12 81 wewn.: 240
pokój: 224
ORCID: 0000-0003-2362-9963

Ostatnie publikacje
1.  Chudziński P., Parameters of Tomonaga-Luttinger liquid in a quasi-one-dimensional material with Coulomb interactions, Physical Review B, ISSN: 2469-9969, DOI: 10.1103/PhysRevB.103.155122, Vol.103, pp.155122-1-12, 2021

We derive a scheme to calculate the Tomonaga-Luttinger liquid’s (TLL) parameters and the holon velocity in a quasi-one-dimensional (quasi-1D) material that consists of two-leg ladders coupled through Coulomb interactions. First, we obtain an analytic formula for electron-electron interaction potential along the conducting axis for a generalized charge distribution in a plane perpendicular to it. Then, we introduce many-body screening that is present in a quasi-1D material by proposing an approximation for the charge susceptibility. Based on this we are able to find the TLL’s parameters and velocities. We then show how to use these to validate the experimental angle-resolved photoemission spectroscopy data measured recently in p polarization in NbSe3. Although we focus our study on this specific material, it is applicable for any quasi-1D system that consists of two-leg ladders as its basic units.

Afiliacje autorów:
Chudziński P. - IPPT PAN
2.  Querales-Flores J.D., Aquado-Puente P., Dangić Đ., Cao J., Chudziński P., Todorov T.N., Grüning M., Fahy S., Savić I., Towards temperature-induced topological phase transition in SnTe: a first-principles study, Physical Review B, ISSN: 2469-9969, DOI: 10.1103/PhysRevB.101.235206, Vol.101, pp.235206-1-10, 2020

The temperature renormalization of the bulk band structure of a topological crystalline insulator, SnTe, is calculated using first-principles methods. We explicitly include the effect of thermal-expansion-induced modification of electronic states and their band inversion on electron-phonon interaction.We show that the direct gap decreases with temperature, as both thermal expansion and electron-phonon interaction drive SnTe towards the phase transition to a topologically trivial phase as temperature increases. The band gap renormalization due to electron-phonon interaction exhibits a nonlinear dependence on temperature as the material approaches the phase transition, while the lifetimes of the conduction band states near the band edge show a nonmonotonic behawior with temperature. These effects should have important implications on bulk electronic and thermoelectric transport in SnTe and other topological insulators.

Afiliacje autorów:
Querales-Flores J.D. - inna afiliacja
Aquado-Puente P. - inna afiliacja
Dangić Đ. - inna afiliacja
Cao J. - inna afiliacja
Chudziński P. - IPPT PAN
Todorov T.N. - inna afiliacja
Grüning M. - inna afiliacja
Fahy S. - inna afiliacja
Savić I. - inna afiliacja

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